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IIT Guwahati Researchers Develop Breakthrough Semiconductor for High-Power Applications

A team of researchers from the Indian Institute of Technology (IIT) Guwahati, in collaboration with IIT Mandi and the Institute of Sensor and Actuator Systems, Technical University Wien, has achieved a significant breakthrough by developing a special semiconductor. This newly created semiconductor, cultivated through an affordable method for gallium oxide production, exhibits ultrawide bandgap properties. Dr. Ankush Bag, Assistant Professor at IIT Guwahati, led the research, emphasizing its potential for enhancing the efficiency of power electronics in high-power applications such as electric vehicles, high-voltage transmission, traction, and industry automation. The development addresses the demand for compound semiconductors with ultra-wide bandgaps crucial for emerging high-power applications. Power electronic systems, essential for regulating electrical power, play a vital role in transforming electricity from various sources for end-user consumption. This breakthrough holds promise for advancing power semiconductor technology and applications. Additionally, it is noteworthy that a Ph.D. scholar from IIT Guwahati recently won the “Best Product Design” award at the Vishwakarma Awards 2023 for a cost-effective water quality monitoring device integrated with IOT.

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